Product News
Tantalum nitride TaN sputtering targets CAS 12033-62-4
2017-09-11
TYR can supply that Tantalum Nitrite (TaN) sputtering target with bonding service now.
Purity: 99.5%
Size: Diameter: 355.6mm (14") max.
Single piece Size: Length: <350mm, Width: <250mm, Thickness: >1mm,
if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree
Shape: discs, plate, rod, tube, sheet, Delta, Rotatable and per drawing
Molar mass: 194.955 g/mol,
Appearance: black crystals,
Density: 14.3 g/cm3,
Melting point: 3090 °C, 3363 K, 5594 °F.
Applications:
Fabrication of Tantalum nitride thin film using the low vacuum magnetron sputtering system.
Optical properties of tantalum nitride films fabricated using reactive unbalanced magnetron sputtering
A barrier metal used in Cu metallization scheme. Tantalum nitride (TaN) films have been shown to provide a barrier to copper diffusion while at the same time promoting good adhesion between the copper lines and the surrounding interlevel dielectric (ILD).
Purity: 99.5%
Size: Diameter: 355.6mm (14") max.
Single piece Size: Length: <350mm, Width: <250mm, Thickness: >1mm,
if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree
Shape: discs, plate, rod, tube, sheet, Delta, Rotatable and per drawing
Molar mass: 194.955 g/mol,
Appearance: black crystals,
Density: 14.3 g/cm3,
Melting point: 3090 °C, 3363 K, 5594 °F.
Applications:
Fabrication of Tantalum nitride thin film using the low vacuum magnetron sputtering system.
Optical properties of tantalum nitride films fabricated using reactive unbalanced magnetron sputtering
A barrier metal used in Cu metallization scheme. Tantalum nitride (TaN) films have been shown to provide a barrier to copper diffusion while at the same time promoting good adhesion between the copper lines and the surrounding interlevel dielectric (ILD).
