Titanium silicide TiSi2 sputtering targets CAS 12039-83-7

Titanium Silicide  Sputtering target

Purity: 99.5%

​Composition: TiSi2, TiSi

Shape: Discs, disks, step disk, delta, plate, sheets or made per drawing

Diameter: 355.6mm (14") max.

Single piece Size: Length: <500mm, Width: <250mm, Thickness: >1mm, if larger size than this, we can do it as Tiles joint by 45 degree or 90 degree

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Titanium disilicide (TiSi2) is an inorganic chemical compound.

Titanium silicide is used in the semiconductor industry. It is typically grown by means of salicide technology over silicon and polysilicon lines to reduce the sheet resistance of local transistors connections. In the microelectronic industry it is typically used in the C54 phase.

Molar mass: 104.038 g/mol  Appearance: black orthorhombic crystals
Density: 4.02 g/cm3    Melting point: 1,470 °C (2,680 °F; 1,740 K)

We also supply below material:

Chromium Silicide , CrSi2 target                    Cobalt Silicide , Co3Si target       

Hafnium Silicide , HfSi2 target                      Molybdenum silicide, MoSi2, Mo5Si3 target       

Nickel Silicide , NiSi target                         Niobium Silicide , Nb5Si3, NbSi2 target       

Tantalum Silicide , Ta5Si3, TaSi2 target                Titanium silicide, Ti5Si3, TiSi2 target       

Tungsten Silicide , WSi2 target                       Vanadium silicide , V3Si, VSi2 target       

Zirconium Silicide , ZrSi2 target