Tin(II) sulfide SnS granules CAS 1314-95-0

Tin(II) sulfide (SnS) granules
 
Purity: 99.99%, 99.999% 

Shape: pieces, granules, rods, tablets, powder

Spec.:

Pieces, Granules: 1-2.5mm, 3-6mm, 3-8mm, 1-3mm, 3-12mm e.t.c

​Powder: -200 mesh, -325 mesh e.t.c

Made sputtering targets method: hot pressing (HP), hot/cold isostatic pressing (HIP, CIP), and vacuum melting, vacuum sintering

Molar mass: 150.775 g/mol                                          Appearance: dark brown solid
Density: 5.22 g/cm3
Melting point: 882 °C (1,620 °F; 1,155 K)                   Boiling point: about 1230 ˚C

 
Applications: Characterization of vacuum-evaporated tin sulfide film for solar cell materials

Tin(II) sulfide is currently one of the leading candidates for absorber layers in next generation thin film solar cells. Currently, both Cadmium Telluride and CIGS (Copper Indium Gallium Sulfide) are used as p-type absorber layers, but they are formulated from toxic, scarce constituents. Tin(II) sulfide, by contrast, is formed from cheap, earth abundant elements, and is nontoxic. This material also has a high optical absorption coefficient, p-type conductivity, and a mid range direct band gap of 1.3-1.4 eV, required electronic properties for this type of absorber layer. In fact, the energy conversion efficiency of tin(II) sulfide is projected to be 32%, comparable to crystalline silicon. Finally, Tin(II) sulfide is stable in both alkaline and acidic conditions. All aforementioned characteristics suggest tin(II) sulfide as an optimal material for solar cells.
At present, tin(II) sulfide thin films for use in photovoltaic cells are still in the research phase of development. Barriers for use include a low open circuit voltage and an inability to realize many of the above properties due to challenges in fabrication, but tin(II) sulfide still remains a promising material once technical challenges are overcome.

Thin films of tin sulfide find wide applications in optoelectronic devices and window materials for heterojunction solar cells. Thin films of p-SnS were brush plated onto tin oxide coated glass substrates from aqueous solution containing SnCl2 and Na2S2O3. Deposits have been characterized with XRD and SEM for structural analysis. Hot probe method showed invariably p-type nature for all the brush plated SnS films. The variation of space charge capacitance, Csc, with applied potential, V, was recorded for the PEC cell with p-SnS/Fe3+, Fe2+/Pt system. The spectral response of the PEC cell formed with SnS photoelectrode was studied and reported.

We also supply beow Sulfide Ceramic sputtering target : 

Iron Sulfide                            FeS, FeS2        99.9%

 Manganese Sulfide                 MnS2              99.9%

 Niobium Sulfide                     NbS2               99.9%

Tungsten Sulfur                        WS2               99.9%
Zinc Sulfide                              ZnS                 99.99%
Cadmium Sulfide                     CdS                99.99%, 99.99%
Molybdenum Sulfide               MoS2              99.9%
Tin Sulfide                                SnS, SnS2       99.99%, 99.999%
Antimony Sulfide                     Sb2S3             99.99%
Lead Sulfide                             PbS                 99.99%
Copper Sulfide                         CuS, Cu2S         99.99%

Copper Zinc Tin Sulfide            Cu2ZnSnS4       99.99%

Lithium Sulfide                          LiS2                  99.99%

Indium Sulfide                           In2S3                99.99%

Silver Sulfide                             Ag2S                   99.99%

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